Thermal expansion of GaSb measured by temperature dependent x-ray diffraction

被引：9

作者：

Nilsen, Tron Arne ^{[1
]}

Breivik, Magnus ^{[1
]}

Myrvagnes, Geir ^{[1
]}

Fimland, Bjorn-Ove ^{[1
]}

机构：

[1] Norwegian Univ Sci & Technol, Dept Elect & Telecommun, NO-7491 Trondheim, Norway

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 03期

关键词：

gallium compounds; III-V semiconductors; lattice constants; tellurium; thermal expansion; X-ray diffraction; LATTICE-PARAMETER; EPITAXIAL LAYERS;

D O I：

10.1116/1.3336341

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

X-ray diffraction measurements were performed using a modified zone technique on Te-doped GaSb wafers, commonly used for molecular beam epitaxial growth, at temperatures between 32 and 546 degrees C to determine the thermal expansion. The authors found the thermal expansion to be very close to the data published by Bublik [Phys. Status Solidi A 73, K271 (1982)]. Control measurements of the lattice constant of Si were found to agree with the results published by Okada and Tokumaru [J. Appl. Phys. 56, 314 (1984)] within our measurement error of +/- 2x10(-4) A degrees. A fourth order polynomial, a((GaSb))(T)=6.0959+3.37x10(-5)T+5.63x10(-8)T(2)-1.29x10(-10)T(3)+1.05x10(-13)T(4) (A degrees) (T in degrees C), was found to be a good fit to our data, while a linear fit with a constant thermal expansion coefficient of 7.17x10(-6) K-1 was found to be a poorer fit. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3336341]

引用

页数：4

共 50 条

[1] Radial thermal expansion of purified multiwall carbon nanotubes measured by X-ray diffraction
Bandow, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (10B): : L1403 - L1405
[2] High-temperature x-ray diffraction measurement of sanidine thermal expansion
Mackert, JR
Twiggs, SW
Williams, AL
JOURNAL OF DENTAL RESEARCH, 2000, 79 (08) : 1590 - 1595
[3] A study on the thermal expansion characteristics of a dissimilar fusion joint by high temperature X-ray diffraction
Banerjee, A
Raju, S
Divakar, R
Mohandas, E
Sudha, C
Terrance, ALE
Parameswaran, P
Panneerselvam, G
Antony, MP
MATERIALS LETTERS, 2006, 60 (12) : 1527 - 1532
[4] GaSb(001) Surface Reconstructions Measured at the Growth Front by Surface X-ray Diffraction
B.P. Tinkham
O. Romanyuk
W. Braun
K.H. Ploog
F. Grosse
M. Takahasi
T. Kaizu
J. Mizuki
Journal of Electronic Materials, 2008, 37 : 1793 - 1798
[5] GaSb(001) Surface Reconstructions Measured at the Growth Front by Surface X-ray Diffraction
Tinkham, B. P.
Romanyuk, O.
Braun, W.
Ploog, K. H.
Grosse, F.
Takahasi, M.
Kaizu, T.
Mizuki, J.
JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (12) : 1793 - 1798
[6] Studies on InAs/GaSb superlattice structural properties by high resolution x-ray diffraction
Zhou, Yi
Chen, Jianxin
Xu, Qingqing
He, Li
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (05):
[7] Thermal expansion of coesite determined by synchrotron powder X-ray diffraction
Kulik, Eleonora
Murzin, Vadim
Kawaguchi, Shogo
Nishiyama, Norimasa
Katsura, Tomoo
PHYSICS AND CHEMISTRY OF MINERALS, 2018, 45 (09) : 873 - 881
[8] Thermal expansion of coesite determined by synchrotron powder X-ray diffraction
Eleonora Kulik
Vadim Murzin
Shogo Kawaguchi
Norimasa Nishiyama
Tomoo Katsura
Physics and Chemistry of Minerals, 2018, 45 : 873 - 881
[9] Glass transition Tg and thermal expansion in glassy materials measured by time-resolved X-ray diffraction
Ota, K
Hajlaoui, K
Vaughan, G
Di Michiel, M
Louzguine, DV
Inoue, A
Yavari, AR
Metastable, Mechanically Alloyed and Nanocrystalline Materials, 2005, 24-25 : 225 - 228
[10] Thermal stability of phase change GaSb\GeTe, SnSe\GeTe and GaSb\SnSe double stacked films revealed by X-ray reflectometry and X-ray diffraction
Velea, A.
Sava, F.
Socol, G.
Vlaicu, A. M.
Mihai, C.
Lorinczi, A.
Simandan, I. D.
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2018, 492 : 11 - 17

← 1 2 3 4 5 →