Effect of rf-power density on the resistivity of Ga-doped ZnO film deposited by rf-magnetron sputter deposition technique

被引：35
作者：
Kim, Jun Kwan
Yun, Sun Jin [1 ]
Lee, Jae Min
Lim, Jung Wook
机构：
[1] Elect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Thin Film Solar Cell Technol Team, Taejon 305700, South Korea
来源：
CURRENT APPLIED PHYSICS | 2010年 / 10卷 / 03期
关键词：
Ga-doped ZnO; Transparent conducting oxide; rf-Magnetron sputter; rf-Power density; Solar cell; THIN-FILMS; TRANSPARENT; PRESSURE;
D O I：
10.1016/j.cap.2010.01.008
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Gallium-doped zinc oxide ( GZO) films were studied using rf-magnetron sputter deposition technique for the use of transparent conducting oxide film. The effects of deposition parameters such as pressure, rf-power, and film thickness on electrical and optical characteristics of GZO films were evaluated to obtain transparent conducting film with high transmittance and low resistivity for a-Si: H thin film solar cells. The resistivity and the structural properties of GZO film strongly depended on rf-power density and film thickness. The 1200 nm-thick GZO film deposited at 15 mTorr and 150 degrees C with rf-power density of 4.46 W/cm(2) showed the resistivity as low as 6.2 x 10(-4) X cm and the average transmittance of 86.5% in visible light wavelength region of 400-800 nm. (C) 2010 Elsevier B. V. All rights reserved.
引用
收藏
页码：S451 / S454
页数：4
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