Reducing phase noise by proper sizing of MOSFETs in LC tuned VCOs

被引:0
|
作者
Li, YM [1 ]
Connelly, JA [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work identifies the relationships between the sizes of the oscillator's core MOSFETs and the phase noise in the 1/f(2) region. Three packaged 1 GHz VCOs with the same LC tank circuit, but different gate lengths were designed and fabricated in a standard digital 0.6 mum CMOS technology. The minimum gate length (L-min) of the core MOSFETs does not result in the minimum phase noise. Instead, the minimum phase noise occurs when the gate length is L-opt, and L-opt = eta . L-min where eta is a parameter that depends upon fabrication process and bias current. From measured results, the phase noise can be further decreased by 2 dBc/Hz at 600 kHz offset from 1 GHz center frequency by using the optimal sizes of the core MOSFETs.
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页码:627 / 630
页数:4
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