Effects of substrate pretreatment and annealing processes on AlN thin films prepared by EVPE

被引：6

作者：

Xie, Luxiao ^{[1
]}

Zhang, Hui ^{[1
,2
]}

Xie, Xinjian ^{[1
]}

Wang, Endong ^{[1
]}

Lin, Xiangyu ^{[1
]}

Song, Yuxuan ^{[1
]}

Liu, Guodong ^{[1
,2
]}

Chen, Guifeng ^{[1
,2
]}

机构：

[1] Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300132, Peoples R China

[2] Hebei Univ Technol, Hebei Engn Lab Photoelect Funct Crystals, Tianjin 300130, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2022年 / 150卷

基金：

中国国家自然科学基金;

关键词：

Substrate pretreatment; Annealing; Surface flatness; OPTICAL-PROPERTIES; SINGLE-CRYSTALS; SUBLIMATION GROWTH; EPITAXIAL-GROWTH; FIELD-EMISSION; SEEDED GROWTH; SAPPHIRE;

D O I：

10.1016/j.mssp.2022.106975

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Herein, a novel process of substrate pretreatment and high temperature annealing for elementary source vapor phase epitaxy (EVPE) is shown to be capable of optimizing the surface flatness of the AlN single crystal thin film, thus increasing its suitability for application in deep ultraviolet optoelectronic devices. Specifically, the increased surface smoothness/flatness of the so-prepared AlN samples are confirmed by field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). In addition, the crystal quality, stress conditions and luminescence performance are significantly improved.

引用

页数：5

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