ZnGeP2 heterocontact with layered III-VI semiconductors

被引：5
|
作者：
Rud', VY [1 ]
Rud', YV [1 ]
机构：
[1] St Petersburg State Tech Univ, AF Ioffe Physicotech Inst, Russian Acad Sci, St Petersburg, Russia
来源：
TECHNICAL PHYSICS LETTERS | 1997年 / 23卷 / 06期
关键词：
Window Effect; Layered Semiconductor; Photoelectric Property; Photovoltaic Effect; Optical Contact;
D O I：
10.1134/1.1261718
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The photoelectric properties of heterojunctions fabricated by clamping wafers of ternary p-ZnGeP2 and InSe and GaSe layered semiconductors onto an optical contact have been studied for the first time and results are reported. The photosensitivity in these structures is greatest when they are illuminated from the side with the ZnGeP2 wafer, and reaches 150 V/W at T = 300 K. In InSe/ZnGeP2 heterostructures, a window effect is observed in the range 1.2-2 eV, whereas for GaSe/ZnGeP2 structures, the photovoltaic effect has a maximum near 2 eV because of the proximity of the band gaps in the contacting semiconductors. (C) 1997 American Institute of Physics. [S1063-7850(97)00106-7].
引用
收藏
页码：415 / 416
页数：2
相关论文
共 50 条
  • [21] Calculation of the electron structure of vacancies and their compensated states in III-VI semiconductors
    M. A. Mehrabova
    R. S. Madatov
    Semiconductors, 2011, 45 : 998 - 1005
  • [22] Epitaxial GaAs Lift Off via III-VI Layered Compounds
    Kojima, Nobuaki
    Wang, Yu-Cian
    Kawakatsu, Kei
    Yamamoto, Akio
    Ohshita, Yoshio
    Yamaguchi, Masafumi
    2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2019, : 1015 - 1017
  • [23] Diluted magnetic semiconductors based on II-VI, III-VI, and IV-VI compounds
    Lashkarev, G. V.
    Sichkovskiyi, V. I.
    Radchenko, M. V.
    Karpina, V. A.
    Butorin, P. E.
    Dmitriev, O. I.
    Lazorenko, V. I.
    Slyn'ko, E. I.
    Lytvyn, P. M.
    Jakiela, R.
    Knoff, W.
    Story, T.
    Aleshkevych, P.
    LOW TEMPERATURE PHYSICS, 2009, 35 (01) : 62 - 70
  • [24] Photosensitivity of heterojunctions formed by deposition of gum on a layered III-VI semiconductor
    Drapak, S. I.
    Kovalyuk, Z. D.
    TECHNICAL PHYSICS, 2007, 52 (09) : 1178 - 1182
  • [25] Femtosecond coherent polariton dynamics in the layered III-VI semiconductor InSe
    Nusse, S
    Bolivar, PH
    Kurz, H
    Levy, F
    Chevy, A
    Lang, O
    PHYSICAL REVIEW B, 1997, 55 (07): : 4620 - 4627
  • [26] ZnGeP2 parametric amplifier
    Barnes, NP
    Murray, KE
    Jani, MG
    Schunemann, PG
    Pollak, TM
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1998, 15 (01) : 232 - 238
  • [27] POLYTYPISM AND LAYER-LAYER INTERACTION IN THE III-VI LAYER SEMICONDUCTORS.
    Depeursinge, Y.
    Baldereschi, A.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1980, 105 (1-3): : 324 - 328
  • [28] ELECTRONIC-PROPERTIES OF THE LAYER III-VI SEMICONDUCTORS - A COMPARATIVE-STUDY
    DEPEURSINGE, Y
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1981, 64 (01): : 111 - 150
  • [29] GROWTH OF III-VI COMPOUND SEMICONDUCTORS BY METALORGANIC MOLECULAR-BEAM EPITAXY
    TERAGUCHI, N
    KATO, F
    KONAGAI, M
    TAKAHASHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2134 - L2136
  • [30] LINEAR-CIRCULAR DICHROISM IN NONLINEAR ABSORPTION OF LIGHT BY III-VI SEMICONDUCTORS
    DVORNIKOV, DP
    IVCHENKO, EL
    SALMANOV, VM
    YAROSHETSKII, ID
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (03): : 283 - 285
12345