Thermoelectric Properties of Highly Ordered Metal-Organic Framework Films

被引:10
作者
Chen, Xin [1 ,2 ]
Wang, Zhengbang [3 ]
Lin, Pengtao [1 ,2 ]
Zhang, Kai [1 ,2 ]
Baumgart, Helmut [1 ,2 ]
Redel, Engelbert [3 ]
Woell, Christof [3 ]
机构
[1] Old Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23529 USA
[2] Thomas Jefferson Natl Accelerator Labs, Appl Res Ctr, 12050 Jefferson Ave,Suite 721, Newport News, VA 23606 USA
[3] Karlsruhe Inst Technol, Dept Inst Funct Interfaces, Hermann Von Helmholtz Pl 1,B330, D-76344 Eggenstein Leopoldshafen, Germany
来源
EMERGING NANOMATERIALS AND DEVICES | 2016年 / 75卷 / 13期
关键词
CONDUCTIVITY;
D O I
10.1149/07513.0119ecst
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, quasi-liquid epitaxially highly oriented Surface Anchored Metal-Organic Framework (SURMOF) films and for comparison random polycrystalline MOF films loaded with tetracyano-quinodimethane (TCNQ) infiltration were fabricated and characterized. The horizontal Seebeck coefficient of the oriented SURMOF films and the random polycrystalline MOF films parallel to the sample surface was measured and has been discussed. The polycrystalline MOF films exhibit a high Seebeck coefficient of 949.9 mu V/K at 290 K, while the horizontal Seebeck coefficient of oriented SURMOF films is practically around 0 mu V/K. Because the quasi-epitaxial oriented SURMOF films are highly anisotropic, there is no measurable horizontal carrier transport parallel to the SURMOF surface. However in contrast to oriented SURMOF films, the electrical properties of random polycrystalline MOF films with sputtered Au contact pads could be measured. The high Seebeck coefficient of these random polycrystalline MOF films demonstrate a promising application potential of MOF films in future thermoelectric and electronic devices.
引用
收藏
页码:119 / 126
页数:8
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