In-situ monitoring of AlGaInP by reflectance spectroscopy in metalorganic vapor phase epitaxy

被引：0
|
作者：
Watatani, C [1 ]
Hanamaki, Y [1 ]
Takemi, M [1 ]
Ono, K [1 ]
Mihashi, Y [1 ]
Nishimura, T [1 ]
机构：
[1] Mitsubishi Electr Corp, High Frequency & Opt Device Works, Itami, Hyogo 6648641, Japan
来源：
2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings | 2004年
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated a real-time reflectance spectroscopy during AlGaInP growth by metalorganic vapor phase epitaxy. The analysis of Fabry-Perot oscillation gives the optical parameters of epitaxial layer such as refractive index (n) and extinction coefficient (k). By using the relationship between these optical parameters and the composition of AlGaInP, in-situ monitoring of growth rate (R-g) and Al content x in (AlxGa1-x)(0.51)In0.49P is realized without any dependence on the structure. Rg and Al content x estimated by using this in-situ monitoring method are in good agreement with those obtained by conventional measurement such as thickness, XRD and PL spectroscopy.
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页码：44 / 47
页数：4
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