Spherical SiGe quantum dots prepared by thermal evaporation

被引：13

作者：

Liao, YC ^{[1
]}

Lin, SY

Lee, SC

Chia, CT

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Normal Univ, Dept Phys, Taipei 117, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 26期

关键词：

D O I：

10.1063/1.1334649

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SiGe alloy quantum dots with spherical shape have been synthesized by the thermal evaporation method. The shape and structure of these dots have been investigated. Transmission electron microscopy images show that they have an average diameter of about 15 nm, and their cores are crystalline. The composition of these dots could be extracted from the Raman peak position of the silicon TO phonon. (C) 2000 American Institute of Physics. [S0003- 6951(00)02752-2].

引用

页码：4328 / 4329

页数：2

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