InAs-based interband-cascade-lasers emitting around 7 μm with threshold current densities below 1 kA/cm2 at room temperature

被引：38
作者：
Dallner, Matthias [1 ]
Hau, Florian [1 ]
Hoefling, Sven [1 ,2 ]
Kamp, Martin [1 ]
机构：
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
[2] Univ St Andrews, Sch Phys & Astron, SUPA, St Andrews KY16 9SS, Fife, Scotland
来源：
APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 04期
关键词：
III-V semiconductors - Indium arsenide - Quantum well lasers - Semiconductor quantum wells;
D O I：
10.1063/1.4907002
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Interband cascade lasers (ICLs) grown on InAs substrates with threshold current densities below 1 kA/cm(2) are presented. Two cascade designs with different lengths of the electron injector were investigated. Using a cascade design with 3 InAs quantum wells (QWs) in the electron injector, a device incorporating 22 stages in the active region exhibited a threshold current density of 940 A/cm(2) at a record wavelength of 7 mu m for ICLs operating in pulsed mode at room temperature. By investigating the influence of the number of stages on the device performance for a cascade design with 2 QWs in the electron injector, a further reduction of the threshold current density to 800 A/cm(2) was achieved for a 30 stage device. (C) 2015 AIP Publishing LLC.
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