Porous SiC nanowire arrays as stable photocatalyst for water splitting under UV irradiation

被引:83
作者
Liu, Hailong [1 ]
She, Guangwei [1 ]
Mu, Lixuan [1 ]
Shi, Wensheng [1 ]
机构
[1] Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China
基金
北京市自然科学基金;
关键词
Carbides; Semiconductor; Nanostructures; Catalytic properties; SILICON-CARBIDE; SEMICONDUCTOR; HYDROGEN;
D O I
10.1016/j.materresbull.2011.12.046
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, we report the fabrication and photocatalytic properties of the oriented arrays of SiC nanowires on the Si substrate. The SiC nanowire arrays were prepared by carbonizing the Si nanowire arrays with the graphite powder at 1250 degrees C. The as-prepared SiC nanowires are highly porous, which endows them with a high surface-to-volume ratio. Considering the large surface areas and the high stability, the porous SiC nanowire arrays were used as photocatalyst for water splitting under UV irradiation. It was found that such porous SiC structure exhibited an enhanced and extremely stable photocatalytic performance. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:917 / 920
页数:4
相关论文
共 20 条
[1]   Photoelectrolysis of water to hydrogen in p-SiC/Pt and p-SiC/n-TiO2 cells [J].
Akikusa, J ;
Khan, SUM .
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2002, 27 (09) :863-870
[2]   Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review [J].
Casady, JB ;
Johnson, RW .
SOLID-STATE ELECTRONICS, 1996, 39 (10) :1409-1422
[3]   Optical characterization of n- and p-doped 4H-SiC by electroreflectance spectroscopy [J].
Demir, G ;
Renfro, TE ;
Glosser, R ;
Saddow, SE .
APPLIED PHYSICS LETTERS, 2004, 84 (18) :3540-3542
[4]  
Deustch T.G., 2006, J PHYS CHEM B, V110, P25297
[5]   ELECTROCHEMICAL PHOTOLYSIS OF WATER AT A SEMICONDUCTOR ELECTRODE [J].
FUJISHIMA, A ;
HONDA, K .
NATURE, 1972, 238 (5358) :37-+
[6]  
Larermann I., 1997, J ELECTROCHEM SOC, V144, P73
[7]   GaN:ZnO solid solution as a photocatalyst for visible-light-driven overall water splitting [J].
Maeda, K ;
Takata, T ;
Hara, M ;
Saito, N ;
Inoue, Y ;
Kobayashi, H ;
Domen, K .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (23) :8286-8287
[8]   SOLAR-ENERGY CONVERSION BY PHOTOELECTROCHEMICAL PROCESSES [J].
MEMMING, R .
ELECTROCHIMICA ACTA, 1980, 25 (01) :77-88
[9]   LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].
MORKOC, H ;
STRITE, S ;
GAO, GB ;
LIN, ME ;
SVERDLOV, B ;
BURNS, M .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398
[10]   PROGRESS IN SILICON-CARBIDE SEMICONDUCTOR ELECTRONICS TECHNOLOGY [J].
NEUDECK, PG .
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (04) :283-288