New era in electronics with single oxide p-n junction?

被引：0
|
作者：
不详
机构：
来源：
AMERICAN CERAMIC SOCIETY BULLETIN | 2012年 / 91卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：19 / 19
页数：1
相关论文
共 50 条
  • [1] P-n junction from solution: Cuprous oxide p-n homojunction by electrodeposition
    Wang, L.
    Han, K.
    Han, X.
    Tao, M.
    PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4, 2008, : 207 - 212
  • [2] TOWARD MOLECULAR ELECTRONICS. AN INTRAMOLECULAR P-N JUNCTION.
    Langer, J.J.
    Uler, E.
    Golankiewicz, K.
    Applied Physics A: Solids and Surfaces, 1987, A43 (02): : 139 - 141
  • [3] Topological p-n junction
    Wang, Jing
    Chen, Xi
    Zhu, Bang-Fen
    Zhang, Shou-Cheng
    PHYSICS OF SEMICONDUCTORS, 2013, 1566 : 187 - +
  • [4] Topological p-n junction
    Wang, Jing
    Chen, Xi
    Zhu, Bang-Fen
    Zhang, Shou-Cheng
    PHYSICAL REVIEW B, 2012, 85 (23):
  • [5] P-N JUNCTION TRANSISTORS
    SHOCKLEY, W
    SPARKS, M
    TEAL, GK
    PHYSICAL REVIEW, 1951, 83 (01): : 151 - 162
  • [6] P-N JUNCTION LASERS
    BURNS, G
    NATHAN, MI
    PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 770 - +
  • [7] P-N JUNCTION CAPACITANCE
    SMITH, WR
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1971, 31 (03) : 201 - &
  • [8] A PHOTOSENSITIVE SINGLE CRYSTAL P-N JUNCTION IN LEAD SELENIDE
    KIMMITT, MF
    PRIOR, AC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (11) : 1034 - 1038
  • [9] Current rectification in a single silicon nanowire p-n junction
    Rangineni, Yaswanth
    Qi, Cheng
    Goncher, Gary
    Solanki, Raj
    Langworthy, Kurt
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2008, 8 (05) : 2419 - 2421
  • [10] Organic Single-Crystalline p-n Junction Nanoribbons
    Zhang, Yajie
    Dong, Huanli
    Tang, Qingxin
    Ferdous, Sunzida
    Liu, Feng
    Mannsfeld, Stefan C. B.
    Hu, Wenping
    Briseno, Alejandro L.
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2010, 132 (33) : 11580 - 11584
12345