Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

被引：22

作者：

Lauenstein, Jean-Marie ^{[1
]}

Goldsman, Neil ^{[2
]}

Liu, Sandra ^{[3
]}

Titus, Jeffrey L. ^{[4
]}

Ladbury, Raymond L. ^{[1
]}

Kim, Hak S.

Phan, Anthony M.

LaBel, Kenneth A. ^{[1
]}

Zafrani, Max ^{[3
]}

Sherman, Phillip ^{[3
]}

机构：

[1] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[2] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA

[3] Int Rectifier Corp, El Segundo, CA 90245 USA

[4] NAVSEA Crane Div, Crane, IN 47522 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 06期

关键词：

Heavy ion; power MOSFET; single-event gate rupture (SEGR);

D O I：

10.1109/TNS.2011.2171995

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed.

引用

页码：2628 / 2636

页数：9

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