(INVITED) deep-submicron digital CMOS potentialities for millimeter-wave applications

被引：0
|
作者：
Cathelin, Andreia [1 ]
Martineau, Baudouin [1 ]
Seller, Nicolas [1 ]
Gianesello, Frederic [1 ]
Raynaud, Christine [1 ]
Belot, Didier [1 ]
机构：
[1] FTM, STMicroelect, F-38926 Crolles, France
来源：
2008 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, VOLS 1 AND 2 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the potentialities of deep submicron CMOS technologies for millimeter-wave applications. The target applications are firstly overviewed. Then, the nanometer bulk and SOI CMOS technology offer is presented, presenting integration solutions that take benefit of the intrinsic performances of the active device while minimizing the loss effects introduced by the BEOL. Finally, perspectives regarding future challenges in terms of system integration are discussed.
引用
收藏
页码：43 / 46
页数：4
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