Low Group Delay 3.1-10.6 GHz CMOS Power Amplifier for UWB Applications

被引：33

作者：

Sapawi, Rohana ^{[1
,2
]}

Pokharel, Ramesh K. ^{[3
]}

Murad, Sohiful A. Z. ^{[1
]}

Anand, Awinash ^{[1
]}

Koirala, Nishal ^{[1
]}

Kanaya, H. ^{[1
]}

Yoshida, K. ^{[1
]}

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Fukuoka 8190395, Japan

[2] Univ Malaysia Sarawak, Dept Elect, Fac Engn, Sarawak, Malaysia

[3] Kyushu Univ, EJUST Ctr, Fukuoka 8190395, Japan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2012年 / 22卷 / 01期

关键词：

Cascade topology; CMOS power amplifier (PA); group delay; resistive shunt feedback; ultra-wideband (UWB);

D O I：

10.1109/LMWC.2011.2176475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter proposes the design of a low group delay ultra-wideband (UWB) power amplifier (PA) in 0.18 mu m. CMOS technology. The PA design employs a three-stage cascade common source topology that has a different design concept from other multi-stage topology to provide a broad bandwidth characteristic, gain flatness of 11.48 +/- 0.6 dB, and low group delay variation of +/- 85.8 ps. A resistive shunt feedback technique is adopted at the first stage of the amplifier to achieve good input matching, which controls the upper frequency of the UWB system. The third stage realizes the gain at the lower corner frequency and the second stage is used to smooth the flatness of the gain curve. By using this method, the proposed design has the lowest group delay variation among the recently reported CMOS PAs for 3.1 to 10.6 GHz applications.

引用

页码：41 / 43

页数：3

共 50 条

[41] A High Linearity and Low Power 3.1-10.6GHz CMOS Up-Conversion Mixer for UWB Applications
Du, Sichun
Huang, Wenbin
Wang, Chunhua
Zhang, Guangxiang
Zhang, Jianguo
WIRELESS PERSONAL COMMUNICATIONS, 2013, 70 (04) : 1623 - 1632
[42] A High Linearity and Low Power 3.1–10.6GHz CMOS Up-Conversion Mixer for UWB Applications
Sichun Du
Wenbin Huang
Chunhua Wang
Guangxiang Zhang
Jianguo Zhang
Wireless Personal Communications, 2013, 70 : 1623 - 1632
[43] A 3.1∼10.6 GHz CMOS direct-conversion receiver for UWB applications
Wu, Chung-Yu
Lo, Yi-Kai
Chen, Min-Chiao
2006 13TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-3, 2006, : 1328 - 1331
[44] A 3.1-10.6 GHz Forward Body Biased Ultra-low-voltage UWB LNA
Rafati, Maryam
Qasemi, Seyed Ruhallah
Nejati, Ali
Amiri, Parviz
2019 27TH IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE 2019), 2019, : 326 - 330
[45] Design of Low Power CMOS Ultra-Wideband 3.1-10.6 GHz Pulse-Based Transmitters
Lin, Kuan-Yu
El-Gamal, Mourad N.
PROCEEDINGS OF THE IEEE 2008 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2008, : 583 - 586
[46] Highly compact 3.1-10.6 GHz UWB LNA in SiGe HBT technology
Dederer, J.
Chartier, S.
Feger, T.
Spitzberg, U.
Trasser, A.
Schumacher, H.
2007 EUROPEAN CONFERENCE ON WIRELESS TECHNOLOGIES, 2007, : 214 - 217
[47] Design of 3.1-10.6 GHz wideband low noise amplifier with 0.2 μm GaAs PHEMT
Institute of RF-OE-ICs, Southeast University, Nanjing 210096, China
Guti Dianzixue Yanjiu Yu Jinzhan, 2007, 1 (32-36):
[48] A 1.2 V reactive-feedback 3.1-10.6 GHz ultrawideband low-noise amplifier in 0.13 μm CMOS
Reiha, Michael T.
Long, John R.
Pekarik, John J.
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2006, : 55 - +
[49] Bridged-shunt-series peaking technique for a 3.1-10.6 GHz ultra-wideband CMOS low noise amplifier
Lin, Yu-Liang
Liao, Hsien-Yuan
Chiou, Hwann-Kaeo
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2008, 50 (03) : 575 - 578
[50] A 1.2 V 3.1-10.6 GHz CMOS Low Noise Amplifier with 24 dB Gain and 2.4 dB Noise Figure
Su Limei
2009 INTERNATIONAL CONFERENCE ON WIRELESS COMMUNICATIONS AND SIGNAL PROCESSING (WCSP 2009), 2009, : 378 - 381

← 1 2 3 4 5 →