Low Group Delay 3.1-10.6 GHz CMOS Power Amplifier for UWB Applications

被引：33

作者：

Sapawi, Rohana ^{[1
,2
]}

Pokharel, Ramesh K. ^{[3
]}

Murad, Sohiful A. Z. ^{[1
]}

Anand, Awinash ^{[1
]}

Koirala, Nishal ^{[1
]}

Kanaya, H. ^{[1
]}

Yoshida, K. ^{[1
]}

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Fukuoka 8190395, Japan

[2] Univ Malaysia Sarawak, Dept Elect, Fac Engn, Sarawak, Malaysia

[3] Kyushu Univ, EJUST Ctr, Fukuoka 8190395, Japan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2012年 / 22卷 / 01期

关键词：

Cascade topology; CMOS power amplifier (PA); group delay; resistive shunt feedback; ultra-wideband (UWB);

D O I：

10.1109/LMWC.2011.2176475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter proposes the design of a low group delay ultra-wideband (UWB) power amplifier (PA) in 0.18 mu m. CMOS technology. The PA design employs a three-stage cascade common source topology that has a different design concept from other multi-stage topology to provide a broad bandwidth characteristic, gain flatness of 11.48 +/- 0.6 dB, and low group delay variation of +/- 85.8 ps. A resistive shunt feedback technique is adopted at the first stage of the amplifier to achieve good input matching, which controls the upper frequency of the UWB system. The third stage realizes the gain at the lower corner frequency and the second stage is used to smooth the flatness of the gain curve. By using this method, the proposed design has the lowest group delay variation among the recently reported CMOS PAs for 3.1 to 10.6 GHz applications.

引用

页码：41 / 43

页数：3

共 50 条

[31] Design of a Low Voltage-Low Power 3.1-10.6 GHz UWB RF Front-End in a CMOS 65 nm Technology
Simitsakis, Paschalis
Papananos, Yannis
Kytonaki, Eleni-Sotiria
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2010, 57 (11) : 833 - 837
[32] Design of a Noise-canceling Differential CMOS LNA for 3.1-10.6 GHz UWB Receivers
Liu, Jinhua
Chen, Guican
Zhang, Ruizhi
2009 IEEE 8TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS, 2009, : 1169 - +
[33] A 3.1-10.6 GHz ultra-wideband CMOS low noise amplifier with current-reused technique
Lin, Yi-Jing
Jin, Jun-De
Chan, C. Y.
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2007, 17 (03) : 232 - 234
[34] Design of 3.1-10.6 GHz ultra-wideband CMOS low noise amplifier with current reuse technique
Wan, Qiuzhen
Wang, Chunhua
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2011, 65 (12) : 1006 - 1011
[35] A 3.1-10.6 GHz CMOS Mixer with a 1.6 GHz IF Bandwidth for Frequency Hopping OFDM Applications
Gong, Fei
DeGroat, Joanne
Li, Chaojiang
PROCEEDINGS OF THE IEEE 2010 NATIONAL AEROSPACE AND ELECTRONICS CONFERENCE (NAECON), 2010, : 275 - 278
[36] Modeling of 3.1-10.6 GHz CMOS filter-based low noise amplifier for ultra-wideband receivers
Ragheb, Tamer
Nieuwoudt, Arthur
Massoud, Yehia
2006 IEEE ANNUAL WIRELESS AND MICROWAVE TECHNOLOGY CONFERENCE, 2006, : 191 - +
[37] Design of a 3.1-10.6 GHz Noise-Canceling CMOS UWB Receiver Front-end
Shi, Bo
Chia, Yan Wah
APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5, 2008, : 1954 - 1957
[38] A 1.2 V reactive-feedback 3.1-10.6 GHz low-noise amplifier in 0.13 μm CMOS
Reiha, Michael T.
Long, John R.
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (05) : 1023 - 1033
[39] A low-power 3.1-10.6 GHz ultra-wideband CMOS low-noise amplifier with common-gate input stage
Oh, Nam-Jin
CURRENT APPLIED PHYSICS, 2011, 11 (01) : 87 - 92
[40] A series peaked gm-boosted 3.1-10.6 GHz CMOS CG UWB LNA for WiMedia
Khurram, Muhammad
Hasan, S. M. Rezaul
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2012, 54 (02) : 532 - 535

← 1 2 3 4 5 →