Numerical and experimental investigation on mc-Silicon growth process by varying the Si3N4 coating thickness of crucible

In the present work, the bottom-opening directional solidification technique was adopted to grow multicrystalline silicon ingot. By varying the thickness of Si3N4 coating on the quartz crucible, the variation in carbon and oxygen concentration in the ingot has been analyzed. The axis-symmetric time-dependent 2D modeling has been done to analyze heat and mass transfer within the directional solidification furnace. We have analyzed the concentration of carbon monoxide, silicon oxide, silicon carbide, carbon and oxygen in the grown mc-Si ingots by varying the Si3N4 thickness. The oxygen and carbon impurities concentration are higher for the Si3N4 coating thickness of 50 mu m to 150 mu m and lower for 200 mu m. The minority carrier lifetimes of the top, middle and bottom wafers have been analysied. The results show that the middle wafer has higher minority carrier lifetime compared to top and bottom wafers.