High-Power Photodiodes for Analog Applications

被引：7
|
作者：
Beling, Andreas [1 ]
Campbell, Joe C. [1 ]
Li, Kejia [1 ]
Li, Qinglong [1 ]
Wang, Ye [1 ]
Woodson, Madison E. [1 ]
Xie, Xiaojun [1 ]
Yang, Zhanyu [1 ]
机构：
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2015年 / E98C卷 / 08期
关键词：
photodiode; photodetector; microwave photonics; TRAVELING-CARRIER PHOTODIODE; GENERATION;
D O I：
10.1587/transele.E98.C.764
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper summarizes recent progress on modified unitraveling carrier photodiodes that have achieved RF output power levels of 1.8 Watt and 4.4 Watt in continuous wave and pulsed operation, respectively. Flip-chip bonded discrete photodiodes, narrowband photodiodes, and photodiodes integrated with antennas are described.
引用
收藏
页码：764 / 768
页数：5
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