Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

被引：51

作者：

Abid, M. ^{[1
]}

Moudakir, T. ^{[1
]}

Orsal, G. ^{[2
]}

Gautier, S. ^{[2
]}

Naciri, A. En ^{[3
]}

Djebbour, Z. ^{[4
,5
]}

Ryou, J. -H. ^{[6
,9
]}

Patriarche, G. ^{[7
]}

Largeau, L. ^{[7
]}

Kim, H. J. ^{[6
,9
]}

Lochner, Z. ^{[6
,9
]}

Pantzas, K. ^{[1
]}

Alamarguy, D. ^{[4
]}

Jomard, F. ^{[8
]}

Dupuis, R. D. ^{[6
,9
]}

Salvestrini, J. -P. ^{[2
]}

Voss, P. L. ^{[1
]}

Ougazzaden, A. ^{[1
]}

机构：

[1] GT Lorraine UMI 2958 Georgia Tech CNRS, Georgia Inst Technol, F-57070 Metz, France

[2] Univ Paul Verlaine & Supelec, Lab Mat Opt Photon & Syst LMOPS, EA 4423, UMI 2958 Georgia Tech CNRS, F-57070 Metz, France

[3] Univ Paul Verlaine Metz, Lab Phys Milieux Denses LPMD, F-57070 Metz, France

[4] Univ Paris 06, Lab Genie Elect Paris LGEP, UMR CNRS 8507, Univ Paris 11, F-91192 Gif Sur Yvette, France

[5] Univ Versailles UVSQ, Dept Phys & Engn Sci, F-78035 Versailles, France

[6] Georgia Inst Technol, Ctr Cpds Semicond, Atlanta, GA 30332 USA

[7] UPR, LPN CNRS, F-91460 Marcoussis, France

[8] Univ Versailles St Quentin1, Lab Phys Solides & Cristallogenese LPSC, UMR 8635 CNRS, F-92195 Meudon, France

[9] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 05期

关键词：

NITRIDE; MIRRORS;

D O I：

10.1063/1.3679703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly reflective deep UV distributed Bragg reflectors (DBRs) based on the BAlN material system have been grown by metalorganic vapour phase epitaxy on AlN template substrates. These structures make use of the transparency of BAlN in the deep UV and the high refractive index contrast between BAlN and AlN, which has been demonstrated to exceed 0.27 at 280 nm. 18-pair BAlN/AlN DBRs showed experimental peak reflectivity of 82% at 311 nm and a stop-bandwidth of 20 nm. At 282 nm, a 24-pair BAlN/AlN DBR structure is demonstrated with experimental peak reflectivity of 60% and stop-bandwidth of 16 nm. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3679703]

引用

页数：4

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