Optical band gap of Si nanoclusters

被引：76

作者：

Delerue, C ^{[1
]}

Allan, G ^{[1
]}

Lannoo, M ^{[1
]}

机构：

[1] Ist Elect & Microelect N, Dept Inst Super Elect N, F-59046 Lille, France

来源：

JOURNAL OF LUMINESCENCE | 1998年 / 80卷 / 1-4期

关键词：

silicon nanocluster; optical band gap; porous silicon; quantum confinement;

D O I：

10.1016/S0022-2313(98)00071-4

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We discuss the nature of the optical transitions in porous silicon and in Si nanoclusters in the light of recent theoretical calculations. The accuracy of the different techniques used to calculate the band gap of Si nanoclusters is analyzed. We calculate the electronic structure of crystallites in the Si-III (BC8) crystalline phase which is known to have a direct gap and we examine the effect of quantum confinement on clusters of SiGe alloy and amorphous silicon. The comparison with the experiments for all the systems suggests the possibility of different channels for the radiative recombination. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：65 / 73

页数：9

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