MOS interface control for GaN power transistors

被引：1

作者：

Hashizume, Tamotsu ^{[1
,2
]}

机构：

[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0600814, Japan

[2] Nagoya Univ, Inst Mat & Syst Sustainabil IMaSS, Nagoya, Aichi 4618601, Japan

来源：

2019 COMPOUND SEMICONDUCTOR WEEK (CSW) | 2019年

关键词：

GaN; MOS; interface states; PMA; HEMT; operation stability;

D O I：

10.1109/iciprm.2019.8819129

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents effects of post-metallization annealing (PMA) on interface properties of GaN MOS structures using Al2O3 prepared by ALD. Excellent C-V characteristics without frequency dispersion were observed in the MOS sample after PMA in N-2 ambient at 300 - 400 degrees C. The PMA process was effective in improving gate controllability and current linearity of the AlGaN/GaN HEMTs on a GaN substrate. Even at 150 degrees C, the HEMT showed low leakage current of 1.5 x 10(-9) A/mm and a threshold voltage drift of only 0.25 V from its room temperature value.

引用

页数：2

共 6 条

[1] Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates [J].

Ando, Yuji ;

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Hashizume, Tamotsu .

APPLIED PHYSICS EXPRESS, 2019, 12 (02)

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Hashizume, Tamotsu ;

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APPLIED PHYSICS LETTERS, 2016, 109 (16)

[5] Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors [J].

Nishiguchi, Kenya ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (10)

[6] Insulated gate and surface passivation structures for GaN-based power transistors [J].

Yatabe, Zenji ;

Asubar, Joel T. ;

Hashizume, Tamotsu .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (39)

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