Microvoid Formation at Solder-Copper Interfaces During Annealing: a Systematic Study of the Root Cause

被引:6
作者
Kumar, Santosh [1 ]
Smetana, Joseph [2 ,6 ]
Love, David [3 ,6 ]
Watkowski, James [4 ]
Parker, Richard [5 ]
Handwerker, Carol A. [1 ]
机构
[1] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
[2] Alcatel Lucent, Plano, TX 75075 USA
[3] Sun Microsyst Inc, Santa Clara, CA 95054 USA
[4] MacDermid Inc, Waterbury, CT 06702 USA
[5] Delphi Elect & Safety, Kokomo, IN 46904 USA
[6] High Dens Packaging User Grp HDPUG Int, Scottsdale, AZ 85253 USA
关键词
Lead-free solder; reliability; microvoids; electroplated copper; KIRKENDALL VOID FORMATION; ORGANIC IMPURITIES; CU; EVOLUTION; JOINTS;
D O I
10.1007/s11664-011-1768-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The electrodeposition conditions that contribute to microvoid formation during isothermal aging of Pb-free solder-electrodeposited copper were evaluated in a systematic series of processing experiments. The results of 2(K) full-factorial design of experiment are presented to show the effect of prescreened electroplating parameters such as brighteners, wetting agent, bath age, and current density on the propensity for microvoiding at solder-copper interfaces after annealing at 125 degrees C for 40 days. It was found that the amount of microvoiding is greatly affected by bath age, wetting agent, brightener, and their interactions. Time-of-flight secondary-ion mass spectroscopy and glow discharge spectroscopy allowed us to establish a correlation between impurities incorporated in copper during electroplating and microvoiding at the solder-copper interface.
引用
收藏
页码:2415 / 2424
页数:10
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