Optimal conditions for NV- center formation in type-1b diamond studied using photoluminescence and positron annihilation spectroscopies

被引：48

作者：

Botsoa, J. ^{[1
,2
]}

Sauvage, T. ^{[1
]}

Adam, M-P. ^{[2
]}

Desgardin, P. ^{[1
]}

Leoni, E. ^{[1
]}

Courtois, B. ^{[1
]}

Treussart, F. ^{[2
]}

Barthe, M-F. ^{[1
]}

机构：

[1] CNRS, UPR 3079, F-45071 Orleans, France

[2] Ecole Normale Super, CNRS, UMR 8537, Lab Photon Quant & Mol, F-94235 Cachan, France

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 12期

关键词：

TRAPPING RATES; DIVACANCIES; VACANCIES; SPINS; BEAM;

D O I：

10.1103/PhysRevB.84.125209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the parameters to optimize the production of negatively charged nitrogen-vacancy color centers (NV-) in type-1b single crystal diamond using proton irradiation followed by thermal annealing under vacuum. Several samples were treated under different irradiation and annealing conditions and characterized by slow positron beam Doppler-broadening and photoluminescence (PL) spectroscopies. At high proton fluences another complex vacancy defect appears limiting the formation of NV-. Concentrations as high as 2.3 x 10(18) cm(-3) of NV- have been estimated from PL measurements. Furthermore, we inferred the trapping coefficient of positrons by NV-. This study brings insight into the production of a high concentration of NV- in diamond, which is of utmost importance in ultrasensitive magnetometry and quantum hybrid systems applications.

引用

页数：6

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