Defect reduction of GaAs/Si epitaxy by aspect ratio trapping

被引：60
作者：
Li, J. Z. [1 ]
Bai, J. [1 ]
Major, C. [1 ]
Carroll, M. [1 ]
Lochtefeld, A. [1 ]
Shellenbarger, Z. [2 ]
机构：
[1] AmberWave Syst Corp, Salem, NH 03079 USA
[2] Sarnoff Corp, Princeton, NJ 08543 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 10期
关键词：
D O I：
10.1063/1.2924410
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the metallorganic chemical vapor deposition growth of GaAs on patterned Si (001) substrates, which utilizes the aspect ratio trapping method. It was found that when growing GaAs above the SiO2 trenched region, coalescence-induced threading dislocations and stacking faults originated on top of the GaAs/SiO2 interfaces. These defects were found to be indirectly related to the initial defect-trapping process during trenched GaAs growth. Causes of coalescence defect formation and its reduction were experimentally investigated by employing a two-step growth optimization scheme. Improvement of material quality has been characterized by cross-sectional and plan-view transmission electron microscopy and x-ray diffraction. (C) 2008 American Institute of Physics.
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