Microstructural investigation of 3C-SiC islands grown by VLS mechanism on 6H-SiC substrate

被引：3
|
作者：
Andreadou, A. [1 ]
Soueidan, M. [2 ]
Tsiaoussis, I. [1 ]
Polychroniadis, E. K. [1 ]
Ferro, G. [2 ]
Frangis, N. [1 ]
机构：
[1] Aristotle Univ Thessaloniki, Dept Phys, Solid State Phys Sect, Thessaloniki 54124, Greece
[2] Univ Lyon 1, Lab Multimat & Interfaces, FR-69622 Villeurbanne, France
来源：
JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 7-9期
关键词：
electron microscopy; structural defects; liquid-phase epitaxy; semiconducting silicon compounds;
D O I：
10.1016/j.jcrysgro.2007.11.120
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Trying to understand how 3C-SiC polytype could nucleate on a 6H-SiC (0001) surface from a liquid phase, the initial stage of the vapor-liquid-solid (VLS) growth was studied. It was shown that, after a simple contact of the seed with the Ge50Si50 Melt UP to 1300 degrees C, without any propane addition, a high density of islands were formed on the seed surface. These islands are well defined, rather flat, elongated along the step edges of the substrate and separated from each other. The transmission electron microscopy (TEM) study showed that these islands were made of 3C-SiC in epitaxial relationship with the substrate. They, however, contain a high density of defects, which are mainly confined near the interface. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1799 / 1803
页数：5
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