Strain-induced formation of self-assembled InGaN/GaN superlattices in nominal InGaN films grown by plasma-assisted molecular beam epitaxy

被引：6
作者：
Khan, Kamruzzaman [1 ]
Sun, Kai [1 ]
Wurm, Christian [2 ]
Datta, Kanak [3 ]
Deotare, Parag B. [3 ,4 ]
Ahmadi, Elaheh [3 ,4 ]
机构：
[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[3] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[4] Univ Michigan, Appl Phys Program, Ann Arbor, MI 48109 USA
来源：
PHYSICAL REVIEW MATERIALS | 2021年 / 5卷 / 12期
基金：
美国国家科学基金会;
关键词：
TIME-RESOLVED PHOTOLUMINESCENCE; INTERNAL ELECTRIC-FIELD; LIGHT-EMITTING-DIODES; QUANTUM-WELL; CRITICAL THICKNESS; PHASE-SEPARATION; LASER-DIODES; LIFETIME; DISLOCATIONS; LEDS;
D O I：
10.1103/PhysRevMaterials.5.124606
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, we report the spontaneous formation of superlattice structures in nominal InGaN films grown by plasma-assisted molecular beam epitaxy. A 700-nm-thick self-assembled In0.2Ga0.8N/GaN superlattice with excellent structural quality was achieved. Strain was studied as a possible driving force for the formation of selfassembled superlattice (SASL) structure by growth of InGaN on ZnO substrate using similar growth conditions. The SASL structures were optically characterized using photoluminescence spectroscopy. Structural characterization was conducted via transmission electron microscopy and atom probe tomography. High-resolution x-ray diffraction (XRD) and XRD reciprocal space map were utilized to determine the average composition and the degree of relaxation of InGaN films. We propose that the vertical phase separation observed in the SASL structure is caused by high-temperature growth and intensified by strain. This work provides a method for engineering strain and growth of thick InGaN films for a variety of applications including solar cells and photodetectors.
引用
收藏
页数：8
相关论文
共 56 条
[1]   Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition [J].
Behbehani, MK ;
Piner, EL ;
Liu, SX ;
El-Masry, NA ;
Bedair, SM .
APPLIED PHYSICS LETTERS, 1999, 75 (15) :2202-2204
[2]   Measured and calculated radiative lifetime and optical absorption of InxGa1-xN/GaN quantum structures [J].
Berkowicz, E ;
Gershoni, D ;
Bahir, G ;
Lakin, E ;
Shilo, D ;
Zolotoyabko, E ;
Abare, AC ;
Denbaars, SP ;
Coldren, LA .
PHYSICAL REVIEW B, 2000, 61 (16) :10994-11008
[3]   Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates [J].
Chakraborty, A ;
Haskell, BA ;
Keller, S ;
Speck, JS ;
Denbaars, SP ;
Nakamura, S ;
Mishra, UK .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (1-7) :L173-L175
[4]   High detectivity InGaN-GaN multiquantum well p-n junction photodiodes [J].
Chiou, YZ ;
Su, YK ;
Chang, SJ ;
Gong, J ;
Lin, YC ;
Liu, SH ;
Chang, CS .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (05) :681-685
[5]   InGaN/GaN multiple quantum well solar cells with long operating wavelengths [J].
Dahal, R. ;
Pantha, B. ;
Li, J. ;
Lin, J. Y. ;
Jiang, H. X. .
APPLIED PHYSICS LETTERS, 2009, 94 (06)
[6]   Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays [J].
DenBaars, Steven P. ;
Feezell, Daniel ;
Kelchner, Katheryn ;
Pimputkar, Siddha ;
Pan, Chi-Chen ;
Yen, Chia-Chen ;
Tanaka, Shinichi ;
Zhao, Yuji ;
Pfaff, Nathan ;
Farrell, Robert ;
Iza, Mike ;
Keller, Stacia ;
Mishra, Umesh ;
Speck, James S. ;
Nakamura, Shuji .
ACTA MATERIALIA, 2013, 61 (03) :945-951
[7]   High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD [J].
Egawa, T ;
Zhang, B ;
Ishikawa, H .
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (03) :169-171
[8]   Self-assembled AlInGaN quaternary superlattice structures [J].
El-Masry, NA ;
Behbehani, MK ;
LeBoeuf, SF ;
Aumer, ME ;
Roberts, JC ;
Bedair, SM .
APPLIED PHYSICS LETTERS, 2001, 79 (11) :1616-1618
[9]   Equilibrium limits of coherency in strained nanowire heterostructures [J].
Ertekin, E ;
Greaney, PA ;
Chrzan, DC ;
Sands, TD .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (11)
[10]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF INASSB STRAINED LAYER SUPERLATTICES - CAN NATURE DO IT BETTER [J].
FERGUSON, IT ;
NORMAN, AG ;
JOYCE, BA ;
SEONG, TY ;
BOOKER, GR ;
THOMAS, RH ;
PHILLIPS, CC ;
STRADLING, RA .
APPLIED PHYSICS LETTERS, 1991, 59 (25) :3324-3326
123456