Ammonia Sensing Properties of a Pt/AlGaN/GaN Schottky Diode

被引：33

作者：

Chen, Tai-You ^{[1
]}

Chen, Huey-Ing ^{[2
]}

Liu, Yi-Jung ^{[1
]}

Huang, Chien-Chang ^{[1
]}

Hsu, Chi-Shiang ^{[1
]}

Chang, Chung-Fu ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 05期

关键词：

AlGaN; ammonia; Schottky diode; sensor; HYDROGEN; SENSITIVITY; SENSOR; PD;

D O I：

10.1109/TED.2011.2115245

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An interesting Pt/AlGaN/GaN Schottky-type ammonia gas sensor is fabricated and studied. Both the steady-and transient-state behaviors of ammonia adsorption reactions are investigated. At 150 degrees C, significant ammonia detection is observed under a low ammonia concentration of 35-ppm NH3/air. Moreover, a high ammonia sensing response of 18 300% and the large Schottky barrier variation ratio Delta phi(b)/phi(b), air of 13.8% are observed upon exposure to a 1% NH3/air gas at 150 degrees C. The presence of dipoles at the metal-semiconductor interface leads to a lowering effect of Schottky barrier height and a larger current. In addition, based on thermodynamics, in contrast with a hydrogen adsorption reaction, the ammonia adsorption reaction is an endothermic reaction. Consequently, the studied NH3 sensor structure provides the promise to integrate high-performance AlGaN/GaN-based optoelectronic and microwave devices on a single chip.

引用

页码：1541 / 1547

页数：7

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