Computer modeling of dual-band HgCdTe photovoltaic detectors

被引：30

作者：

Józwikowski, K ^{[1
]}

Rogalski, A ^{[1
]}

机构：

[1] Mil Univ Technol, Inst Appl Phys, PL-00908 Warsaw, Poland

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 03期

关键词：

D O I：

10.1063/1.1380989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The performance of middle wavelength/long wavelength (MW/LW) dual-band HgCdTe photovoltaic detectors was examined theoretically. An original iteration scheme was used to solve the system of nonlinear continuity equations and the Poisson equation. The effect of composition and doping profiles on the heterojunction detector parameters is presented. It is assumed that the performance of photodiodes is due to thermal generation governed by the Auger mechanism. All quantities are functions of the electric potential and Fermi quasi-levels. The results of calculations are presented as maps showing spatial distribution of electrical potential, photoelectrical gain, sensitivity, and density of noise generation. The theoretical predictions of heterojunction device parameters are compared with available experimental data. (C) 2001 American Institute of Physics.

引用

页码：1286 / 1291

页数：6

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