Green Synthesis of Ge1-xSnx Alloy Nanoparticles for Optoelectronic Applications

被引:2
作者
Attar, Gopal Singh [1 ]
Liu, Mimi [1 ]
Lai, Cheng-Yu [1 ]
Radu, Daniela R. [1 ]
机构
[1] Florida Int Univ, Dept Mech & Mat Engn, Miami, FL 33174 USA
基金
美国国家科学基金会; 美国国家航空航天局;
关键词
germanium-tin alloy; colloidal synthesis; nanoparticles; electronic materials; semiconductors; GERMANIUM; NANOCRYSTALS; NANOWIRES;
D O I
10.3390/cryst11101216
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Compositionally controlled, light-emitting, group IV semiconductor nanomaterials have potential to enable on-chip data communications and infrared (IR) imaging devices compatible with the complementary metal-oxide-semiconductor (CMOS) technology. The recent demonstration of a direct band gap laser in Ge-Sn alloys opens avenues to the expansion of Si-photonics. Ge-Sn alloys showed improved effective carrier mobility as well as direct band gap behavior at Sn composition above 6-11%. In this work, Ge1-xSnx alloy nanoparticles with varying Sn compositions from x = 0.124 to 0.178 were prepared via colloidal synthesis using sodium borohydride (NaBH4), a mild and non-hazardous reducing reagent. Successful removal of the synthesized long-alkyl-chain ligands present on nanoparticles' surfaces, along with the passivation of the Ge-Sn nanoparticle surface, was achieved using aqueous (NH4)(2)S. The highly reactive surface of the nanoparticles prior to ligand exchange often leads to the formation of germanium oxide (GeO2). This work demonstrates that the (NH4)(2)S further acts as an etching reagent to remove the oxide layer from the particles' surfaces. The compositional control and long-term stability will enable the future use of these easily prepared Ge1-xSnx nanoalloys in optoelectronic devices.
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页数:8
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