Single-Event Multiple Transients in Conventional and Guard-Ring Hardened Inverter Chains Under Pulsed Laser and Heavy-Ion Irradiation

被引：15

作者：

Chen, Rongmei ^{[1
]}

Zhang, Fengqi ^{[2
]}

Chen, Wei ^{[2
]}

Ding, Lili ^{[2
]}

Guo, Xiaoqiang ^{[2
]}

Shen, Chen ^{[3
]}

Luo, Yinhong ^{[2
]}

Zhao, Wen ^{[2
]}

Zheng, Lisang ^{[3
]}

Guo, Hongxia ^{[2
]}

Liu, Yinong ^{[1
]}

Fleetwood, Daniel M. ^{[4
]}

机构：

[1] Tsinghua Univ, Dept Engn Phys, Key Lab Particle & Radiat Imaging, Minist Educ, Beijing 100084, Peoples R China

[2] Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Radiat Simulat & Eff, Xian 710024, Shaanxi, Peoples R China

[3] Cogenda Co Ltd, Suzhou 215021, Jiangsu, Peoples R China

[4] Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2017年 / 64卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Bi; inverter chain; layout design; pulsed laser beam; single-event multiple transients (SEMTs); single-event transient (SET) pulsewidth; 130; NM; PROPAGATION; MITIGATION; UPSET;

D O I：

10.1109/TNS.2017.2738646

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single-event multiple transients (SEMTs) are investigated using an on-chip self-triggered circuit. Measured results for inverter chains of two layout designs, including a guard-ring design and a conventional design, are compared under pulsed laser and heavy-ion (Bi) irradiations. Pulsed laser exposures of different energies and Bi heavy-ion irradiation at different injection angles, including along the well direction and across the well direction, are found to produce SEMTs with different probabilities. The use of a guard-ring hardening technique is demonstrated to be very effective in reducing production of SEMTs for inverters without direct electrical connection. Charge sharing-induced SEMTs are found to have different pulsewidth distributions for angled ion incidence than normal ion or laser incidence.

引用

页码：2511 / 2518

页数：8

共 39 条

[1] Influence of N-Well Contact Area on the Pulse Width of Single-Event Transients [J].

Ahlbin, J. R. ;

Atkinson, N. M. ;

Gadlage, M. J. ;

Gaspard, N. J. ;

Bhuva, B. L. ;

Loveless, T. D. ;

Zhang, E. X. ;

Chen, L. ;

Massengill, L. W. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (06) :2585-2590

[2] The Effect of Layout Topology on Single-Event Transient Pulse Quenching in a 65 nm Bulk CMOS Process [J].

Ahlbin, J. R. ;

Gadlage, M. J. ;

Ball, D. R. ;

Witulski, A. W. ;

Bhuva, B. L. ;

Reed, R. A. ;

Vizkelethy, G. ;

Massengill, L. W. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (06) :3380-3385

[3]

Ahlbin J. R., 2011, P IEEE INT REL PHYS

[4] Effect of Multiple-Transistor Charge Collection on Single-Event Transient Pulse Widths [J].

Ahlbin, Jonathan R. ;

Gadlage, Matthew J. ;

Atkinson, Nicholas M. ;

Narasimham, Balaji ;

Bhuva, Bharat L. ;

Witulski, Arthur F. ;

Holman, W. Timothy ;

Eaton, Paul H. ;

Massengill, Lloyd W. .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2011, 11 (03) :401-406

[5] Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits [J].

Ahlbin, Jonathan R. ;

Massengill, Lloyd W. ;

Bhuva, Bharat L. ;

Narasimham, Balaji ;

Gadlage, Matthew J. ;

Eaton, Paul H. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (06) :3050-3056

[6] Laser Verification of Charge Sharing in a 90 nm Bulk CMOS Process [J].

Amusan, O. A. ;

Casey, M. C. ;

Bhuva, B. L. ;

McMorrow, D. ;

Gadlage, M. J. ;

Melinger, J. S. ;

Massengill, L. W. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (06) :3065-3070

[7] Charge collection and charge sharing in a 130 nm CMOS technology [J].

Amusan, Oluwole A. ;

Witulski, Arthur F. ;

Massengill, Lloyd W. ;

Bhuva, Bharat L. ;

Fleming, Patrick R. ;

Alles, Michael L. ;

Sternberg, Andrew L. ;

Black, Jeffrey D. ;

Schrimpf, Ronald D. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) :3253-3258

[8] Layout Technique for Single-Event Transient Mitigation via Pulse Quenching [J].

Atkinson, Nicholas M. ;

Witulski, Arthur F. ;

Holman, W. Timothy ;

Ahlbin, Jonathan R. ;

Bhuva, Bharat L. ;

Massengill, Lloyd W. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (03) :885-890

[9] Pulsed Laser Single-Event Effects in Highly Scaled CMOS Technologies in the Presence of Dense Metal Coverage [J].

Balasubramanian, Anupama ;

McMorrow, Dale ;

Nation, Sarah A. ;

Bhuva, Bharat L. ;

Reed, Robert A. ;

Massengill, Lloyd W. ;

Loveless, Thomas D. ;

Amusan, Oluwole A. ;

Black, Jeffrey D. ;

Melinger, Joseph S. ;

Baze, Mark P. ;

Ferlet-Cavrois, Veronique ;

Gaillardin, Marc ;

Schwank, James R. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (06) :3401-3406

[10] Experimental Characterization of Radiation-Induced Charge Sharing [J].

Bennett, William G. ;

Hooten, Nicholas C. ;

Schrimpf, Ronald D. ;

Reed, Robert A. ;

Weller, Robert A. ;

Mendenhall, Marcus H. ;

Witulski, Arthur F. ;

Wilkes, D. Mitchell .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (06) :4159-4165

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