Magnetic field-dependent photoluminescence linewidths as a probe of disorder length scales in quantum wells

被引：13

作者：

Bansal, Bhavtosh ^{[1
,2
]}

Hayne, M. ^{[3
]}

Arora, B. M. ^{[4
]}

Moshchalkov, V. V. ^{[1
]}

机构：

[1] Katholieke Univ Leuven, INPAC, Pulsed Fields Grp, B-3001 Louvain, Belgium

[2] Catholic Univ Nijmegen, High Field Magnet Lab, IMM, NL-6525 ED Nijmegen, Netherlands

[3] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[4] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 25期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2825417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence from highly disordered GaAs quantum wells is studied in magnetic fields up to 50 T. The monotonic decrease of the photoluminescence linewidth with increasing quantum well thickness indicates that interface roughness is the primary source of line broadening. The magnetic field-dependent exciton linewidth shows an unexpected behavior. We observe not only just a monotonic increase in linewidth but also a field-dependent decreasing linewidth in thicker quantum wells. These observations are understood by postulating the existence of two correlation lengths for the interface fluctuations, one much smaller than the exciton size and the other one of the order of the exciton size. (c) 2007 American Institute of Physics.

引用

页数：3