Bandgap grading and Al0.3Ga0.7As heterojunction emitter for highly efficient GaAs-based solar cells

被引：54

作者：

Hwang, Sun-Tae ^{[1
,2
]}

Kim, Soohyun ^{[1
]}

Cheun, Hyeunseok ^{[1
]}

Lee, Hyun ^{[1
]}

Lee, Byungho ^{[2
]}

Hwang, Taehyun ^{[2
]}

Lee, Sangheon ^{[2
]}

Yoon, Wonki ^{[1
]}

Lee, Heon-Min ^{[1
]}

Park, Byungwoo ^{[2
]}

机构：

[1] LG Elect, Mat & Devices Adv Res Inst, Seoul 06763, South Korea

[2] Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, WCU Hybrid Mat Program, Seoul 08826, South Korea

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2016年 / 155卷

基金：

新加坡国家研究基金会;

关键词：

GaAs solar cells; Heterojunction; Bandgap grading; CONVERSION; TANDEM;

D O I：

10.1016/j.solmat.2016.06.009

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Both an Al0.3Ga0.7As heterojunction in the p-type emitter and a bandgap-graded layer in the n-type light absorbing base were employed in the GaAs-based solar cells. The simulation by AFORS-HET (Helmholtz-Zentrum Berlin) confirmed that the Al0.3Ga0.7As heterojunction enhanced the open-circuit voltage (V-oc) by similar to 2%, and the n-type bandgap grading increased the fill factor by similar to 1%, respectively. The increased power conversion efficiency by similar to 3% supported the simulation results. An additional efficiency gain was obtained by the shape optimization of the band bending in the 80-nm compositional profile, increasing V-oc up to 1.103 V. The cell with the anti-reflective coating exhibited high performance with a power conversion efficiency of 28.7% under 1 sun illumination, close to the world record of 28.8%. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：264 / 272

页数：9

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