Composition control of lead zirconate titanate thin films in electron cyclotron resonance plasma enhanced chemical vapor deposition system

被引：9
|
作者：
Kim, JW
Shin, JS
Wee, DM
No, K
Lee, WJ
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 5A期
关键词：
ferroelectric; PZT; thin film; ECR; PECVD; MOCVD;
D O I：
10.1143/JJAP.35.2726
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Lead zirconate titanate (PZT) thin films sere fabricated on Pt/Ti/SiO2/Si substrates Ly electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). Lead beta-diketonate (Pb(DPM)(2), zirconium l-butoxide (Zr(OC4H9)(4)) and titanium i-propoxide (Ti(OC3H7)(4)) were used as metalorganic (MO) precursors. Perovskite single-phase PZT films were obtained at temperatures below 500 degrees C when the Pb/(Zr+Ti) concentration ratio was close to 1. The cation concentrations in the PZT films were successfully controlled by adjusting the flow rate of each MO source. The variation in composition and structure with the process temperature and the MO source Bow rates was discussed.
引用
收藏
页码：2726 / 2730
页数：5
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