Process and Temperature Impact on Single-Event Transients in 28nm FDSOI CMOS

被引：0
|
作者：
Bartra, Walter Calienes [1 ]
Vladimirescu, Andrei [2 ]
Reis, Ricardo [3 ]
机构：
[1] Univ Fed Rio Grande do Sul, PGMicroinformat Inst, Porto Alegre, RS, Brazil
[2] Inst Super Elect Paris, Microelect Lab, Paris, France
[3] Univ Fed Rio Grande do Sul, PGMicro PGCC Informat Inst, Porto Alegre, RS, Brazil
来源：
2017 IEEE 8TH LATIN AMERICAN SYMPOSIUM ON CIRCUITS & SYSTEMS (LASCAS) | 2017年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Fully Depleted Silicon-On-Insulator (FDSOI) devices have been shown to have a superior resilience to radiation effects. In this work an analysis of the 28nm FDSOI resilience to heavy-ion impacts is undertaken at different temperature and buried oxide (BOX) thickness using TCAD tools. The results show that BOX thickness variation has a low impact on the collected charge (CC) produced by the heavy ion when it funnels through the device, as the CC value varies only by 1.14%. Over a 400K temperature range, the maximum CC variation due to the heavyion impact is nearly 18%.
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页数：4
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