A 16-Element Phased-Array CMOS Transmitter with Variable Gain Controlled Linear Power Amplifier for 5G New Radio

被引:33
作者
Cho, Yunsung [1 ]
Lee, Woojae [1 ]
Park, Hyun-chul [1 ]
Park, Byungjoon [1 ]
Lee, Jeong Ho [1 ]
Kim, Jihoon [1 ]
Lee, Jooseok [1 ]
Kim, Seokhyeon [1 ]
Park, Jaehong [1 ]
Park, Sangyong [1 ]
An, Kyu Hwan [1 ]
Son, Juho [1 ]
Yang, Sung-Gi [1 ]
机构
[1] Samsung Elect Co Ltd, Suwon, South Korea
来源
2019 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2019年
关键词
28GHz; 5G; beamforming; mm-wave; phased array; transceiver; transmitter; TRANSCEIVER;
D O I
10.1109/rfic.2019.8701791
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a 28-GHz 16-element phased-array transmitter for the fifth-generation (5G) new radio (NR) applications, focusing on the power amplifier (PA). The IC was fabricated using a 28-nm bulk CMOS technology with a flip-chip package, and evaluated with 5G NR signal having an 800-MHz total bandwidth. Each channel of the 16 phased-array transmitter has a 16 dBm output at 1-dB compression point and a large gain range from 24 to 63 dB. The full 16-element array achieves an average output power of 18 dBm with a record-level system error vector magnitude (EVM) of less than-33.5 dB (<2.1%) at a total power consumption of 1.63 W (102 mW of per channel) including all biases, digital control, and power-management- unit (PMU) blocks, over the frequency band from 26.5 to 29.5 GHz.
引用
收藏
页码:247 / 250
页数:4
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