Dynamic Random Access Memory Effect and Memory Device Derived from a Functional Polyimide Containing Electron Donor-Acceptor Pairs in the Main Chain

被引:55
作者
Tian, Guofeng [1 ]
Wu, Dezhen [1 ]
Qi, Shengli [1 ]
Wu, Zhanpeng [1 ]
Wang, Xiaodong [1 ]
机构
[1] BUCT, State Key Lab Chem Resource Engn, Beijing 100029, Peoples R China
基金
中国国家自然科学基金;
关键词
acceptor; charge transfer; donor; memory; polyimides; POLYMER MEMORY; THIN-FILM; BISTABILITY; COPOLYMER; MOIETIES; SEMICONDUCTORS; MECHANISM; LAYER;
D O I
10.1002/marc.201000570
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
A functional polyimide, hexafluoroisopropyl bis(phthalic dianhydride)/3,6-diaminocarbazole (6FDA/DAC), in which DAC serves as electron donor and 6FDA as electron acceptor, has been synthesized in our present work. Electrical characterization results on the sandwiched polyimide memory device (ITO/Thin polyimide Layer/Au) indicate that the polyimide possesses electrical bistability and the device exhibits two accessible conductivity states, which can be reversibly switched from the low-conductivity (OFF) state to the high-conductivity (ON) state with an ON/OFF current ratio of about 10(4). Different from the widely reported write-once-read-many-times (WORM) effects, the device with the 6FDA/DAC polyimide as the active layer shows dynamic random access memory (DRAM) behavior. The ON state of the device was lost immediately after removal of the applied voltage, while by applying a constant bias (e.g., 3 V) the ON state can be electrically sustained. The roles of donor and acceptor components in the polyimide main chain were elucidated through molecular simulation.
引用
收藏
页码:384 / 389
页数:6
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