Application of CMOS Technology to Silicon Photomultiplier Sensors

被引：14
作者：
D'Ascenzo, Nicola [1 ]
Zhang, Xi [1 ]
Xie, Qingguo [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Life Sci & Technol, Wuhan 430073, Hubei, Peoples R China
来源：
SENSORS | 2017年 / 17卷 / 10期
关键词：
silicon photomultiplier; avalanche detection structures; geiger mode; low photon flux sensors; PHOTON-AVALANCHE-DIODE; DETECTION EFFICIENCY; IMAGE SENSOR; HV-CMOS; DIGITAL SIPM; TIME; NOISE; PERFORMANCE; DETECTOR; ARRAY;
D O I：
10.3390/s17102204
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments.
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页数：15
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