Performance analysis of carbon-based tunnel field-effect transistors for high frequency and ultralow power applications

被引：2
|
作者：
Yoon, Youngki [1 ]
Kim, Sung Hwan [1 ]
Salahuddin, Sayeef [1 ]
机构：
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 23期
关键词：
Heterojunctions - Yarn - Tunnel field effect transistors;
D O I：
10.1063/1.3524826
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We perform atomistic simulations and energy-delay analysis on tunnel FETs (TFETs) based on partially unzipped carbon nanotubes (CNTs) and compare their performance against conventional homojunction CNT-TFETs. The device simulations show that the carbon heterojunctions could provide much larger on current compared to homojunction CNT-TFETs due to the effective small bandgap for the injected carriers, without paying a large penalty for off current and subthreshold swing. Subsequent energy-delay analysis shows that these heterojunctions could enable high performance operation and could prove favorable compared to a conventional Ge-source heterojunction TFET. Homojunction TFETs are found to be useful for low-frequency and low-power applications. (C) 2010 American Institute of Physics. [doi:10.1063/1.3524826]
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页数：3
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