A GaAs-based self-aligned stripe distributed feedback laser

被引：1

作者：

Lei, H. ^{[1
]}

Stevens, B. J. ^{[2
]}

Fry, P. W. ^{[2
]}

Babazadeh, N. ^{[1
]}

Ternent, G. ^{[3
]}

Childs, D. T. ^{[3
]}

Groom, K. M. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Nanosci & Technol Bldg,North Campus,Broad Lane, Sheffield S3 7HQ, S Yorkshire, England

[2] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr Technol 3 4, Nanosci & Technol Bldg,North Campus,Broad Lane, Sheffield S3 7HQ, S Yorkshire, England

[3] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2016年 / 31卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

self-aligned stripe laser; distributed feedback laser; GaAs; LAYER;

D O I：

10.1088/0268-1242/31/8/085001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate operation of a GaAs-based self-aligned stripe (SAS) distributed feedback (DFB) laser. In this structure, a first order GaInP/GaAs index-coupled DFB grating is built within the p-doped AlGaAs layer between the active region and the n-doped GaInP opto-electronic confinement layer of a SAS laser structure. In this process no Al-containing layers are exposed to atmosphere prior to overgrowth. The use of AlGaAs cladding affords the luxury of full flexibility in upper cladding design, which proved necessary due to limitations imposed by the grating infill and overgrowth with the GaInP current block layer. Resultant devices exhibit single-mode lasing with high side-mode-suppression of >40 dB over the temperature range 20 degrees C-70 degrees C. The experimentally determined optical profile and grating confinement correlate well with those simulated using Fimmwave.

引用

页数：6

共 46 条

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