X-Band, 15-W-Class, Highly Efficient Deep-Space GaN SSPA for PROCYON Mission

被引:23
作者
Kobayashi, Yuta [1 ]
Kawasaki, Shigeo [1 ]
机构
[1] Japan Aerosp Explorat Agcy, Inst Space & Astronaut Sci, Chuo Ku, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 2525210, Japan
关键词
HEMT;
D O I
10.1109/TAES.2016.150207
中图分类号
V [航空、航天];
学科分类号
08 ; 0825 ;
摘要
An X-band, 15-W-class gallium nitride (GaN) solid-state power amplifier (SSPA) for the 50-kg-class ultrasmall deep-space probe PROCYON has been demonstrated in deep space for the first time. PROCYON was launched on December 3, 2014, as a subpayload of the Hayabusa 2 spacecraft. The GaN SSPA consists of three-stage, single-end amplifiers. The final-stage GaN high-power amplifier, which dominates the characteristics of the SSPA, achieves a maximum drain efficiency of 55.8% at 8.4 GHz. The fabricated SSPA using this GaN high-power amplifier has dimensions of 150 x 120 x 62 mm and weighs 1.5 kg, and its space applicability was confirmed through space environmental tests. For more than 2450 h of continuous operation in deep space, the GaN SSPA has achieved an average output power of 41.7 dBm (14.8 W), with standard deviation of 0.12 dB, maximum overall efficiency of 35.7%, and average efficiency of 33.8%. To the authors' knowledge, this is the highest efficiency of all proven X-band onboard SSPAs.
引用
收藏
页码:1340 / 1351
页数:12
相关论文
共 35 条
[1]  
Abbot D. C., 2001, TEXAS INSTRUMENTS SZ
[2]   A NEW EMPIRICAL NONLINEAR MODEL FOR HEMT AND MESFET DEVICES [J].
ANGELOV, I ;
ZIRATH, H ;
RORSMAN, N .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1992, 40 (12) :2258-2266
[3]   Extensions of the Chalmers nonlinear HEMT and MESFET model [J].
Angelov, I ;
Bengtsson, L ;
Garcia, M .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1996, 44 (10) :1664-1674
[4]  
Angelov I., 2009, MOS AK GSA WORKSH BA
[5]  
[Anonymous], 2011, TELECOMMUNICATION RE
[6]  
[Anonymous], 4010B CCSDS
[7]  
[Anonymous], 2012, SOL STAT POW AMPL SS
[8]  
Arlon Microwave Materials, 2007, AD1000 PTEFE WOV FIB
[9]  
Baran O, 2010, RADIOENGINEERING, V19, P141
[10]  
Boger W., 2005, IEEE MTT S INT MICR