Intra-valence band photocurrent measurements on Ge quantum dots in Si

被引：15

作者：

Miesner, C ^{[1
]}

Brunner, K ^{[1
]}

Abstreiter, G ^{[1
]}

机构：

[1] Walter Schottky Inst, D-85748 Garching, Germany

来源：

THIN SOLID FILMS | 2000年 / 380卷 / 1-2期

关键词：

silicon; germanium; quantum dot; intraband; photocurrent;

D O I：

10.1016/S0040-6090(00)01498-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated p-doped Ge quantum dots embedded in Si using mid-infrared photocurrent spectroscopy. The samples were grown on n(-)-Si (100) Substrates using solid-suurce MBE. The Ge dots form by self assembly at T= 510 degreesC in the Stranski-Krastanov growth mode. They have a diameter of approximately 25 nm and a height of 2 nm. Photocurrent measurements have been performed on vertical as well as on lateral structures. In both geometries a broad photoresponse is obtained from the dots for excitation between 200 and 600 meV. The photocurrent maximum is at approximately 324 meV for the vertical and at approximately 284 meV for the lateral structure. This shift in the lateral structure can be explained by transport of the photoexcited carriers within the Ge wetting layer. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：180 / 182

页数：3

共 13 条

[1] Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots [J].