Non-Linear Distortion in Ultra Wideband GaN Power Amplifiers

被引：0
|
作者：
Delgado-Pascual, Emilio [1 ]
Oreja-Gigorro, Eduardo [1 ]
Jose Sanchez-Martinez, Juan [1 ]
Luz Gil-Heras, Maria [1 ]
Bucno-Fernandez, Virginia [1 ]
Bodalo-Marquez, Antonio [1 ]
Grajal, Jesus [2 ]
机构：
[1] Indra Sistemas SA, Madrid, Spain
[2] UPM, Madrid, Spain
来源：
2018 48TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2018年
关键词：
ACPR; corporate; distributed; GaN; MER; power amplifier; QAM; ultrawideband;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper studies non linear distortion effects in two different architectures of ultra wideband GaN power amplifiers. As transmitted power, carrier frequency and modulation complexity increase in modern communications systems, there is a need to characterize nonlinearity in HPAs. Two general purpose HPAs, designed and manufactured using European GaN technology, are analyzed in a complex modulation scenario, to characterize the effects produced by their nonlinear features.
引用
收藏
页码：1261 / 1264
页数：4
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