Microstructural and optical properties of Ag assisted β-Ga2O3 nanowires on silicon substrate

In this paper, Silver nanoparticle assisted vertically aligned beta -Ga2O3 nanowires (Ag NP-beta -Ga2O3 NW) were fabricated on Silicon (Si) -substrate by Glancing angle deposition (GLAD) technique. With the integration of Ag NP, the XRD pattern exhibits a reduction in the crystallite size of beta -Ga2O3 NW. The EDS analysis confirms the presence of Ag NP, thereby further supporting the XRD result. The SEM image analysis shows a consistency in the size (40-50 nm) of NW growth for Ag NP-beta -Ga2O3 NW. The photoluminescence spectra show an enhancement in the Ag NP-beta -Ga2O3 NW structure. Lastly, the optical absorption spectra of beta -Ga2O3 NW and Ag NP-beta -Ga2O3 NW reveals that the presence of Ag NP in beta -Ga2O3 NW enhance the photon absorption in the UV and the visible region as compared to beta -Ga2O3 NW due to the synergistic action of Ag NP and beta -Ga2O3 NW. This study demonstrates that high-quality Ag NP-beta -Ga2O3 NW nanostructure can be grown in large quantities for a variety of applications, including photodetector, gas sensor, and power devices applications.