Microstructural and optical properties of Ag assisted β-Ga2O3 nanowires on silicon substrate

被引：14

作者：

Meitei, Shagolsem Romeo ^{[1
]}

Ngangbam, Chitralekha ^{[2
]}

Singh, Naorem Khelchand ^{[1
]}

机构：

[1] Natl Inst Technol Nagaland, Dept Elect & Commun Engn, Dimapur 797103, India

[2] Natl Inst Technol Manipur, Dept Elect & Commun Engn, Imphal 795001, Manipur, India

来源：

OPTICAL MATERIALS | 2021年 / 117卷 / 117期

关键词：

Ag NP; XRD; Photoluminescence; UV-Vis absorption; beta-Ga < sub > 2 <; sub > O < sub > 3  sub > NW; BETA-GA2O3; SINGLE-CRYSTALS; FILMS;

D O I：

10.1016/j.optmat.2021.111190

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, Silver nanoparticle assisted vertically aligned beta -Ga2O3 nanowires (Ag NP-beta -Ga2O3 NW) were fabricated on Silicon (Si) -substrate by Glancing angle deposition (GLAD) technique. With the integration of Ag NP, the XRD pattern exhibits a reduction in the crystallite size of beta -Ga2O3 NW. The EDS analysis confirms the presence of Ag NP, thereby further supporting the XRD result. The SEM image analysis shows a consistency in the size (40-50 nm) of NW growth for Ag NP-beta -Ga2O3 NW. The photoluminescence spectra show an enhancement in the Ag NP-beta -Ga2O3 NW structure. Lastly, the optical absorption spectra of beta -Ga2O3 NW and Ag NP-beta -Ga2O3 NW reveals that the presence of Ag NP in beta -Ga2O3 NW enhance the photon absorption in the UV and the visible region as compared to beta -Ga2O3 NW due to the synergistic action of Ag NP and beta -Ga2O3 NW. This study demonstrates that high-quality Ag NP-beta -Ga2O3 NW nanostructure can be grown in large quantities for a variety of applications, including photodetector, gas sensor, and power devices applications.

引用

页数：5

共 34 条

[1] Structural effects of niobium and silver doping on titanium dioxide nanoparticles [J].

Ahmad, A. ;

Thiel, J. ;

Shah, S. Ismat .

PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2007, 61 :11-15

[2] Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method [J].

Aida, Hideo ;

Nishiguchi, Kengo ;

Takeda, Hidetoshi ;

Aota, Natsuko ;

Sunakawa, Kazuhiko ;

Yaguchi, Yoichi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (11) :8506-8509

[3] Lattice dynamics of a mist-chemical vapor deposition-grown corundum-like Ga2O3 single crystal [J].

Cusco, R. ;

Domenech-Amador, N. ;

Hatakeyama, T. ;

Yamaguchi, T. ;

Honda, T. ;

Artus, L. .

JOURNAL OF APPLIED PHYSICS, 2015, 117 (18)

[4] Structural, optical, and opto-dielectric properties of W-doped Ga2O3 thin films [J].

Dakhel, A. A. .

JOURNAL OF MATERIALS SCIENCE, 2012, 47 (07) :3034-3039

[5] Effects of Low Ag Doping on Physical and Optical Waveguide Properties of Highly Oriented Sol-Gel ZnO Thin Films [J].

Dehimi, Mohamed ;

Touam, Tahar ;

Chelouche, Azeddine ;

Boudjouan, Fares ;

Djouadi, Djamel ;

Solard, Jeanne ;

Fischer, Alexis ;

Boudrioua, Azzedine ;

Doghmane, Abdellaziz .

ADVANCES IN CONDENSED MATTER PHYSICS, 2015, 2015

[6] Plasmon-induced Ag decorated CeO2 nanorod array for photodetector application [J].

Devi, Ngasepam Monica ;

Singh, Naorem Khelchand .

NANOTECHNOLOGY, 2020, 31 (22)

[7] Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma [J].

Donmez, Inci ;

Ozgit-Akgun, Cagla ;

Biyikli, Necmi .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2013, 31 (01)

[8]

Dusastre V., 2011, MAT SUSTAINABLE ENER

[9] Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates [J].

Higashiwaki, Masataka ;

Sasaki, Kohei ;

Kuramata, Akito ;

Masui, Takekazu ;

Yamakoshi, Shigenobu .

APPLIED PHYSICS LETTERS, 2012, 100 (01)

[10] Ga2O3/GaN-Based Metal-Semiconductor-Metal Photodetectors Covered With Au Nanoparticles [J].

Huang, Zheng-Da ;

Weng, Wen-Yin ;

Chang, Shoou-Jinn ;

Hua, Yuan-Fu ;

Chiu, Chiu-Jung ;

Tsai, Tsung-Ying .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (18) :1809-1811

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