Effects of capping on the Ga1-xMnxAs magnetic depth profile -: art. no. 072506

被引：10
作者：
Kirby, BJ [1 ]
Borchers, JA
Rhyne, JJ
O'Donovan, KV
Wojtowicz, T
Liu, X
Ge, Z
Shen, S
Furdyna, JK
机构：
[1] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA
[2] Natl Inst Stand & Technol, NIST Ctr Neutron Res, Gaithersburg, MD 20899 USA
[3] Los Alamos Natl Lab, Manuel Lujan Jr Neutron Scattering Ctr, Los Alamos, NM 87545 USA
[4] Univ Calif Irvine, Dept Physiol & Biophys, Irvine, CA 92697 USA
[5] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
[6] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 07期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.1867292
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Annealing can increase the Curie temperature and net magnetization in uncapped Ga1-xMnxAs films, effects that are suppressed when the films are capped with GaA.s. Previous polarized neutron reflectometry (PNR) studies of uncapped Ga1-xMnxAs revealed a pronounced magnetization gradient that was reduced after annealing. We have extended this study to Ga1-xMnxAs capped with GaAs. We observe no increase in Curie temperature or net magnetization upon annealing. Furthermore, PNR measurements indicate that annealing produces minimal differences in the depth-dependent magnetization, as both as-grown and annealed films feature a significant magnetization gradient. These results suggest that the GaAs cap inhibits redistribution of interstitial Mn impurities during annealing. (C) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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