Resonant electron scattering by defects in single-walled carbon nanotubes

被引：394

作者：

Bockrath, M

Liang, WJ

Bozovic, D

Hafner, JH

Lieber, CM

Tinkham, M

Park, HK ^{[1
]}

机构：

[1] Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

[2] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

来源：

SCIENCE | 2001年 / 291卷 / 5502期

关键词：

D O I：

10.1126/science.291.5502.283

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We report the characterization of defects in individual metallic single-walled carbon nanotubes by transport measurements and scanned gate microscopy. A sizable fraction of metallic nanotubes grown by chemical vapor deposition exhibits strongly gate voltage-dependent resistance at room temperature. Scanned gate measurements reveal that this behavior originates from resonant electron scattering by defects in the nanotube as the Fermi Level is varied by the gate voltage. The reflection coefficient at the peak of a scattering resonance was determined to be about 0.5 at room temperature. An intratube quantum dot device formed by two defects is demonstrated by Low-temperature transport measurements.

引用

页码：283 / 285

页数：3

共 27 条

[1] Scanned probe microscopy of electronic transport in carbon nanotubes [J].