Characterization and parasitic extraction of EMI filters using scattering parameters

被引：124

作者：

Wang, S ^{[1
]}

Lee, FC ^{[1
]}

Odendaal, WG ^{[1
]}

机构：

[1] Virginia Polytech Inst & State Univ, Bradley Dept Elect & Comp Engn, Blacksburg, VA 24061 USA

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2005年 / 20卷 / 02期

关键词：

electromagnetic interference (EMI) filter; insertion loss; insertion voltage gain; parasitic coupling; scattering parameters; Tee network;

D O I：

10.1109/TPEL.2004.842949

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the electromagnetic interference (EMI) filter is first characterized using Scattering parameters (S-parameters). Based on this S-parameters model, the insertion voltage gains are derived for EMI filter with arbitrary levels of source and load impedances. Experiments are carried out to verify this approach. Based on the network theory, S-parameters are then utilized to extract the parasitic couplings in both one-stage and two-stage EMI filters. EMI filter models are constructed. Experiments finally verify the proposed methods. The approaches are very useful for the prediction of EMI filter performance, and for the design and optimization of EMI filters.

引用

页码：502 / 510

页数：9

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