292 nm AlGaN single-quantum well light emitting diodes grown on transparent AlN base

被引：98

作者：

Hanlon, A ^{[1
]}

Pattison, PM ^{[1
]}

Kaeding, JF ^{[1
]}

Sharma, R ^{[1
]}

Fini, P ^{[1
]}

Nakamura, S ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat Sci & Engn, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 6B期

关键词：

LED; MOCVD; ultraviolet; UV; AlN; AlGaN;

D O I：

10.1143/JJAP.42.L628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the use of a novel transparent AlN base layer to achieve sub-300 nm electroluminescence from an AlGaN p-n junction single quantum well light emitting diode grown on sapphire by metal organic chemical vapor deposition. For unpackaged devices tested on wafer at a continuous current of 120 mA, an optical power of 2.4 muW was achieved. Peak emission was 292 nm, with very little secondary wavelength emission.

引用

页码：L628 / L630

页数：3

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