Quadrupolar (A-π-D-π-A) Tetra-aryl 1,4-Dihydropyrrolo[3,2-b]pyrroles as Single Molecular Resistive Memory Devices: Substituent Triggered Amphoteric Redox Performance and Electrical Bistability

被引:45
作者
Balasubramanyam, Ram Kumar Canjeevaram [1 ,4 ,6 ]
Kumar, Rajnish [1 ,3 ]
Ippolito, Samuel J. [4 ,5 ,6 ]
Bhargava, Suresh K. [5 ,6 ]
Periasamy, Selvakannan R. [5 ,6 ]
Narayan, Ramanuj [1 ,3 ]
Basak, Pratyay [2 ,3 ]
机构
[1] Indian Inst Chem Technol, CSIR, Polymers & Funct Mat Div, RMIT IICT Joint Res Ctr, Hyderabad 500007, Andhra Pradesh, India
[2] Indian Inst Chem Technol, CSIR, Nanomat Lab, Inorgan & Phys Chem Div, Hyderabad 500007, Andhra Pradesh, India
[3] Indian Inst Chem Technol, CSIR, Acad Sci & Innovat Res AcSIR, Hyderabad 500007, Andhra Pradesh, India
[4] RMIT Univ, Sch Elect & Comp Engn, 124 La Trobe St, Melbourne, Vic 3000, Australia
[5] RMIT Univ, Sch Appl Sci, 124 La Trobe St, Melbourne, Vic 3000, Australia
[6] RMIT Univ, Ctr Adv Mat & Ind Chem, 124 La Trobe St, Melbourne, Vic 3000, Australia
关键词
ORGANIC SEMICONDUCTORS; DONOR; NONVOLATILE; DERIVATIVES; OLIGOTHIOPHENES; ADJUSTMENT; BEHAVIOR; FILM;
D O I
10.1021/acs.jpcc.5b11509
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A series of quadrupolat (A-pi-D-pi-A) tetraaryl 1,4-dihydropyrrolo[3,2-b]pyrrole (DHPP) derivatives synthesized are show-cased as potential organic resistive memory (ORM) devices for the first time. The experimental observations coupled with density functional theory (DFT) calculations probe in detail the role of terminal substituent groups (p-NH2, p-Cl; p-CN, p-NO2, m-NO2) on the optical and electrical properties. Electrochemical studies reveal that the 3- and 4-dinitro derivatives form an unusual class of tetra-aryl DHPPs that exhibit intrinsic amphoteric redox behavior contrary to the literature reports. The bipolar nature within a single molecule was harnessed to design operational ORMs. Interestingly, the memory devices fabricated using the structural isomers exhibited dissimilar memory characteristics. While the p-NO2 derivative displays permanent Write Once Read Many times (WORM) memory, its meta-counterpart represents a behavior akin to rewriteable flash memory. The noticeably higher ON/OFF ratio (similar to 10(4)) for the p-NO2 derivatives could be ascribed to their matched redox energy levels with the work function of active electrodes favoring better charge injection. Rational interpretation of these findings strongly suggests that the choice and strategic positioning of terminal substituents can significantly alter the nature of "charge traps" affecting the device outcome. These encouraging findings open up a relatively less chartered territory of air stable fused pyrrole systems that holds great promise for realizing next gerieration organic memory devices:
引用
收藏
页码:11313 / 11323
页数:11
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