Nanoscale characterization of the silicon dioxide-silicon carbide interface using elemental mapping by energy-filtered transmission electron microscopy

被引：17

作者：

Chang, KC ^{[1
]}

Bentley, J

Porter, LM

机构：

[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

[2] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2003年 / 32卷 / 05期

关键词：

silicon carbide (SiC); oxide; interface; excess carbon; transmission electron microscopy (TEM); energy-filtered transmission electron microscopy (EFTEM);

D O I：

10.1007/s11664-003-0179-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Energy-filtered transmission electron microscopy (EFTEM) was used to study 6H-SiC/SiO2 interfaces produced by thermal oxidation as a function of the oxidation conditions. Elemental maps of C and Si were used to calculate C-to-Si concentration profiles across the interfaces. Enhanced C/Si concentrations (up to similar to 35%) were observed at distinct regions in samples oxidized at 1100degreesC for 4 h in a wet ambient. The data from a number of randomly selected regions indicate that re-oxidation at 950degreesC for 3 h significantly reduced, but did not eliminate, the amount of excess interfacial carbon.

引用

页码：464 / 469

页数：6

共 19 条

[1]

Afanas'ev VV, 1997, PHYS STATUS SOLIDI A, V162, P321, DOI 10.1002/1521-396X(199707)162:1<321::AID-PSSA321>3.0.CO

[2]

2-F

[3] ''Carbon cluster model'' for electronic states at SiC/SiO2 interfaces [J].

Bassler, M ;

Pensl, G ;

Afanas'ev, VV .

[4] High-carbon concentrations at the silicon dioxide-silicon carbide interface identified by electron energy loss spectroscopy [J].

Chang, KC ;

Nuhfer, NT ;

Porter, LM ;

Wahab, Q .

APPLIED PHYSICS LETTERS, 2000, 77 (14) :2186-2188

[5] Anomalously high density of interface states near the conduction band in SiO2/4H-SiC MOS devices [J].

Das, MK ;

Um, BS ;

Cooper, JA .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :1069-1072

[6] Reduction of interface-state density in 4H-SiC n-type metal-oxide-semiconductor structures using high-temperature hydrogen annealing [J].

Fukuda, K ;

Suzuki, S ;

Tanaka, T ;

Arai, K .

APPLIED PHYSICS LETTERS, 2000, 76 (12) :1585-1587

[7]

GHOSH RN, 2001, SILICON CARBIDE MAT

[8] XPS analysis of SiO2/SiC interface annealed in nitric oxide ambient [J].

Li, HF ;

Dimitrijev, S ;

Sweatman, D ;

Harrison, HB .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :399-402

[9]

LIPKIN LA, 2001, SILICON CARBIDE MAT

[10]

LIPKIN LA, 1999, Patent No. 5972801

← 1 2 →