Dependence of oxygen precipitate size and strain on external stress at annealing of Cz-Si

被引：4

作者：

Antonova, IV

Misiuk, A

Bak-Misiuk, J

Popov, VP

Plotnikov, AE

Surma, B

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

[2] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[3] Inst Phys, PL-02668 Warsaw, Poland

[4] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1999年 / 286卷 / 1-2期

关键词：

hydrostatic pressure; nucleation; oxygen precipitates; silicon;

D O I：

10.1016/S0925-8388(98)01013-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The size of oxygen precipitates (OP) and the strain at the OP/matrix interface as a function of enhanced pressure during annealing of Ct-Si were investigated. High pressure treatments led to an increase in the strain at the OP/matrix interface in comparison with the effect of annealing at atmospheric pressure. This high strain is suggested to be caused by acceleration of the gettering process at enhanced pressure. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：241 / 245

页数：5

共 32 条

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